Schottky barrier

Results: 40



#Item
11Ultraviolet detectors in thin sputtered ZnO films Henrik Fabricius, Torben Skettrup, and Paul Bisgaard Ultraviolet-sensitive photodiodes have been made using the Schottky barrier formed in the contact layer between a thi

Ultraviolet detectors in thin sputtered ZnO films Henrik Fabricius, Torben Skettrup, and Paul Bisgaard Ultraviolet-sensitive photodiodes have been made using the Schottky barrier formed in the contact layer between a thi

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Source URL: share.madebydelta.com

Language: English - Date: 2014-09-02 08:47:34
12)  ) Di Cao,†,‡ Pei Pang,†,‡ Jin He,‡,* Tao Luo,†,‡ Jae Hyun Park,^ Predrag Krstic,^ Colin Nuckolls, Jinyao Tang, and Stuart Lindsay†,‡,§,*

) ) Di Cao,†,‡ Pei Pang,†,‡ Jin He,‡,* Tao Luo,†,‡ Jae Hyun Park,^ Predrag Krstic,^ Colin Nuckolls, Jinyao Tang, and Stuart Lindsay†,‡,§,*

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Source URL: www.chemistry.hku.hk

Language: English - Date: 2015-05-06 04:34:28
13Innovations Embedded  Silicon Carbide Schottky Barrier Diodes  White Paper

Innovations Embedded Silicon Carbide Schottky Barrier Diodes White Paper

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Source URL: www.rohm.com

Language: English
14PRL 101, week ending 28 NOVEMBERPHYSICAL REVIEW LETTERS

PRL 101, week ending 28 NOVEMBERPHYSICAL REVIEW LETTERS

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Source URL: vandersypenlab.tudelft.nl

Language: English - Date: 2012-07-20 04:39:06
15Innovations Embedded  Silcon Carbide - Schottky Barrier Diodes Selection Guide

Innovations Embedded Silcon Carbide - Schottky Barrier Diodes Selection Guide

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Source URL: www.rohm.com

Language: English
16Principal Research Results  Fabrication of High Performance 4kV SiC Schottky Barrier Diode Background Silicon carbide (SiC) is a promising material for high-voltage and low-loss power semiconductor devices because of its

Principal Research Results Fabrication of High Performance 4kV SiC Schottky Barrier Diode Background Silicon carbide (SiC) is a promising material for high-voltage and low-loss power semiconductor devices because of its

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Source URL: criepi.denken.or.jp

Language: English - Date: 2008-09-29 03:24:45
17Annual Research Report 2006

Annual Research Report 2006

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Source URL: criepi.denken.or.jp

Language: English - Date: 2008-09-29 03:33:31
18IEEE ELECTRON DEVICE LETTERS, VOL. 34, NO. 11, NOVEMBER[removed]Antimonide-Based Heterostructure p-Channel MOSFETs With Ni-Alloy Source/Drain

IEEE ELECTRON DEVICE LETTERS, VOL. 34, NO. 11, NOVEMBER[removed]Antimonide-Based Heterostructure p-Channel MOSFETs With Ni-Alloy Source/Drain

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Source URL: www.nrl.navy.mil

Language: English - Date: 2013-11-26 12:58:30
19HSMS-282x Surface Mount RF Schottky Barrier Diodes Data Sheet Description/Applications

HSMS-282x Surface Mount RF Schottky Barrier Diodes Data Sheet Description/Applications

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Source URL: rfkits.com

Language: English - Date: 2010-09-05 15:20:36
20From nanogenerators to piezotronics—A decade-long study of ZnO nanostructures Zhong Lin Wang The following article is based on the MRS Medal Lecture, presented by Zhong Lin Wang on November 30, 2011, at the 2011 Materi

From nanogenerators to piezotronics—A decade-long study of ZnO nanostructures Zhong Lin Wang The following article is based on the MRS Medal Lecture, presented by Zhong Lin Wang on November 30, 2011, at the 2011 Materi

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Source URL: www.nanoscience.gatech.edu

Language: English - Date: 2012-09-14 08:45:39